Observation of compressive and tensile strains in InGaAs/GaAs by photoluminescence spectroscopy
- 11 July 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (2), 113-115
- https://doi.org/10.1063/1.100385
Abstract
Variation in the magnitude and sign of the strain in GaAs/InGaAs/GaAs single quantum wells are studied as a function of layer thickness using photoluminescence spectroscopy. It is found that as the compressively strained ternary layer relaxes with increasing thickness, a tensile strain is introduced in the GaAs capping layer. This reduces the GaAs band gap and lifts the degeneracy of the valence band, which becomes light hole in character.Keywords
This publication has 12 references indexed in Scilit:
- Photoluminescence in strained InGaAs-GaAs heterostructuresJournal of Applied Physics, 1987
- Determination of critical layer thickness in InxGa1−xAs/GaAs heterostructures by x-ray diffractionApplied Physics Letters, 1987
- Optical characterization of pseudomorphic InxGa1−xAs–GaAs single-quantum-well heterostructuresJournal of Applied Physics, 1986
- Strained-layer quantum-well injection laserApplied Physics Letters, 1984
- Doping and transport studies in InxGa1−xAs/GaAs strained-layer superlatticesJournal of Vacuum Science & Technology B, 1983
- Energy band-gap shift with elastic strain in GaxIn1−xP epitaxial layers on (001) GaAs substratesJournal of Applied Physics, 1983
- Material parameters of In1−xGaxAsyP1−y and related binariesJournal of Applied Physics, 1982
- Effects of uniaxial stress on the electroreflectance spectrum of Ge and GaAsPhysical Review B, 1977
- Dependence of the direct energy gap of GaAs on hydrostatic pressurePhysical Review B, 1975
- Intrinsic Piezobirefringence in GaSb, InAs, and InSbPhysical Review B, 1971