Resonant tunneling in Si/Si1−xGex double-barrier structures
- 23 May 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (21), 1809-1811
- https://doi.org/10.1063/1.99632
Abstract
Resonant tunneling of holes has been observed for the first time in double‐barrier diodes with strained Si1−xGex quantum wells formed between unstrained Si barriers. Negative differential resistance with a peak‐to‐valley ratio in current of 1.8 at 77 K and of 2.2 at 4.2 K has been exhibited by a sample with a 3.3‐nm‐wide Si0.79Ge0.21 well between 6.0 nm Si barriers. The positions of the current peaks are in reasonable agreement with calculations of the positions of heavy‐hole levels in the quantum well.Keywords
This publication has 10 references indexed in Scilit:
- Observation of resonant tunneling through a compositionally graded parabolic quantum wellApplied Physics Letters, 1987
- Importance of space-charge effects in resonant tunneling devicesApplied Physics Letters, 1987
- Characterization of MBE grown Si/GexSi1−x strained layer superlatticesJournal of Crystal Growth, 1987
- Light–heavy-hole mixing in quantum well structuresJournal of Applied Physics, 1986
- Electroreflectance spectroscopy of Si-quantum-well structuresPhysical Review B, 1986
- Boron doping in Si molecular beam epitaxy by co-evaporation of B2O3 or doped siliconApplied Physics Letters, 1986
- New evidence of extensive valence-band mixing in GaAs quantum wells through excitation photoluminescence studiesPhysical Review B, 1985
- Resonant tunneling oscillations in a GaAs-AlxGa1−xAs heterostructure at room temperatureApplied Physics Letters, 1985
- Resonant tunneling through quantum wells at frequencies up to 2.5 THzApplied Physics Letters, 1983
- Resonant tunneling in semiconductor double barriersApplied Physics Letters, 1974