Electron heating in silicon dioxide and off-stoichiometric silicon dioxide films
- 15 February 1985
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 57 (4), 1214-1238
- https://doi.org/10.1063/1.334518
Abstract
Electron heating in silicon dioxide (SiO2) at electric fields ≲5 MV/cm is demonstrated using three different experimental techniques: carrier separation, electroluminescence, and vacuum emission. Gradual heating of the electronic carrier distribution is demonstrated for fields from 5 to 12 MV/cm with the average excess energy of the distribution reaching ≳4 eV with respect to the bottom of the SiO2 conduction band edge. Off-stoichiometric SiO2 (OS-SiO2) layers are shown to behave similarly to very thin SiO2(≲70 Å in thickness) with a transition occurring from ‘‘cool’’ to ‘‘hot’’ electrons as the conduction mechanism changes from direct tunneling between silicon (Si) islands in the SiO2 matrix of the OS-SiO2 material to Fowler-Nordheim emission into the conduction band of the SiO2 regions. The relationship of electron heating to electron trapping, positive charge generation, interface state creation, and dielectric breakdown is treated. The importance of various scattering mechanisms for stabilizing the electronic field-induced heating in the SiO2 and preventing current runaway and impact ionization is discussed. Scattering may be due to disorder, trapped charges, and acoustical phonons, as well as longitudinal optical phonons.Keywords
This publication has 78 references indexed in Scilit:
- Monte-Carlo Studies of the Electron Mobility in SiO2Physica Status Solidi (a), 1982
- Transport processes of electrons in MNOS structuresJournal of Applied Physics, 1979
- Characterization of current transport in MNOS structures with complementary tunneling emitter bipolar transistorsIEEE Transactions on Electron Devices, 1979
- Electron transport and breakdown in SiO2Journal of Applied Physics, 1979
- High-field capture of electrons by Coulomb-attractive centers in silicon dioxideJournal of Applied Physics, 1976
- Electron transport at high fields in a-SiO2Applied Physics Letters, 1975
- Hole injection and transport in SiO2 films on SiApplied Physics Letters, 1975
- Determination of the sign of carrier transported across SiO2 films on SiApplied Physics Letters, 1974
- Calculation of electric field breakdown in quartz as determined by dielectric dispersion analysisJournal of Applied Physics, 1972
- Velocity Acquired by an Electron in a Finite Electric Field in a Polar CrystalPhysical Review B, 1970