Effects of electrically active impurities on the epitaxial regrowth rate of amorphized silicon and germanium
- 1 July 1982
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 93 (1-2), 171-178
- https://doi.org/10.1016/0040-6090(82)90102-x
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
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