Charge Writing at the LaAlO3/SrTiO3 Surface
- 2 June 2010
- journal article
- letter
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 10 (7), 2588-2591
- https://doi.org/10.1021/nl1012695
Abstract
Biased conducting-tip atomic force microscopy (AFM) has been shown to write and erase nanoscale metallic lines at the LaAlO3/SrTiO3 interface. Using various AFM modes, we show the mechanism of conductivity switching is the writing of surface charge. These charges are stably deposited on a wide range of LaAlO3 thicknesses, including bulk crystals. A strong asymmetry with writing polarity was found for 1 and 2 unit cells of LaAlO3, providing experimental evidence for a theoretically predicted built-in potential.Comment: 12 pages, 4 figures, plus supplementary information, submitted to Nano LetterKeywords
All Related Versions
This publication has 29 references indexed in Scilit:
- Atomic force microscopy as a tool for atom manipulationNature Nanotechnology, 2009
- Nanolithography and Nanochemistry: Probe‐Related Patterning Techniques and Chemical Modification for Nanometer‐Sized DevicesAngewandte Chemie International Edition, 2004
- Erasable electrostatic lithography for quantum componentsNature, 2003
- Dynamic atomic force microscopy methodsSurface Science Reports, 2002
- Attaching Silica Nanoparticles from Suspension onto Surface Charge Patterns Generated by a Conductive Atomic Force Microscope TipAdvanced Materials, 2001
- Subsurface charge accumulation imaging of a quantum Hall liquidNature, 1998
- Local, Nonvolatile Electronic Writing of Epitaxial Pb(Zr 0.52 Ti 0.48 )O 3 /SrRuO 3 HeterostructuresScience, 1997
- Atomic Resolution of the Silicon (111)-(7×7) Surface by Atomic Force MicroscopyScience, 1995
- Large-scale charge storage by scanning capacitance microscopyUltramicroscopy, 1992
- Atomic Force MicroscopePhysical Review Letters, 1986