Local, Nonvolatile Electronic Writing of Epitaxial Pb(Zr 0.52 Ti 0.48 )O 3 /SrRuO 3 Heterostructures
- 16 May 1997
- journal article
- other
- Published by American Association for the Advancement of Science (AAAS) in Science
- Vol. 276 (5315), 1100-1103
- https://doi.org/10.1126/science.276.5315.1100
Abstract
A scanning probe microscope was used to induce local, nonvolatile field effects in epitaxial, ferroelectric Pb(Zr0.52Ti0.48)O3/SrRuO3heterostructures. Field-effected regions with linewidths as small as 3500 angstroms were written by locally switching the polarization field of the Pb(Zr0.52Ti0.48)O3layer; the electronic density of the underlying metallic SrRuO3 layer was modified and the sheet resistance was changed by up to 300 ohms per square. This procedure is completely reversible and allows submicrometer electronic features to be written directly in two dimensions, with no external electrical contacts or lithographic steps required.Keywords
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