Peroxypolytungstic acids: A new inorganic resist material
- 4 August 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (5), 298-300
- https://doi.org/10.1063/1.97147
Abstract
Recently reported amorphous polytungstic acids containing peroxo groups are found to provide a new inorganic resist. A homogeneous resist film can be formed easily with the spin coating method. This film is made insoluble in water by deep ultraviolet, x ray, and electron beam irradiation. The oxygen reactive ion etching (O2 RIE) durability is found to be high enough that a bilayer resist scheme employing this resist as a top imaging layer gives a high resolution pattern (line and space: 0.38 μm). The mechanism for the radiation induced reaction is also discussed.Keywords
This publication has 5 references indexed in Scilit:
- Peroxopolytungstic acids synthesized by direct reaction of tungsten or tungsten carbide with hydrogen peroxideInorganica Chimica Acta, 1986
- A new heteropolyacid with carbon as a heteroatom in a Keggin-like structureNature, 1984
- An inorganic resist technology and its applications to LSI fabrication processesMicroelectronic Engineering, 1984
- Spin-coated amorphous chalcogenide filmsJournal of Applied Physics, 1982
- Vibrational investigations of polyoxometallates. 1. Valence force field of Mo6O192- based on total isotopic substitution (oxygen-18, molybdenum-92, molybdenum-100)Inorganic Chemistry, 1982