Interface chemistry of metal-GaAs Schottky-barrier contacts
- 15 May 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 34 (10), 630-632
- https://doi.org/10.1063/1.90642
Abstract
A survey of the metal‐semiconductor interface chemistry for GaAs and seven metals, Ag, Al, Au, Cr, Fe, Sn, and Ti, by using x‐ray photoemission spectroscopy (XPS) is reported. Sn and Ag each form an abrupt inert interface with GaAs. Au, Al, Fe, Cr, and Ti each form a chemically reacted nonabrupt interface with a trend for increasing dissociation of GaAs in the order listed. Also reported is the first observation of epitaxial Fe growth on GaAs.Keywords
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