Electron energy loss spectroscopy of the Si(111)—simple-metal interface
- 15 February 1977
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 15 (4), 2195-2201
- https://doi.org/10.1103/physrevb.15.2195
Abstract
New data are presented on the formation of Schottky barriers on Si(111) 7 × 7 with evaporated Al, Ga, or In metal. Electron-energy-loss spectra (ELS) have been taken as a function of metal overlayer coverage. The removal of clean surface state transitions has been observed at submonolayer coverage. The behavior of interface collective excitations of bulk-silicon-like transitions and of transitions from the metal core levels confirm the covalent character of the interface chemical bonds.Keywords
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