Dose dependence of residual lattice disorder in ion-implanted and annealed silicon

1 April 1977

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 30 (7), 322-323
https://doi.org/10.1063/1.89408

Abstract

Significant nonlinear effects have been observed in the dose/disorder relationship for Pb‐implanted Si both before and after annealing. The results suggest that accumulated stresses within the implanted Si layer may play a significant role in recrystallization.

Keywords

DOSE−RESPONSE RELATIONSHIPS
SILICON
ION IMPLANTATION
ANNEALING
ORDER−DISORDER TRANSFORMATIONS
PHYSICAL RADIATION EFFECTS
LEAD IONS
ELECTRON MICROSCOPY
RUTHERFORD SCATTERING
BACKSCATTERING
ION SCATTERING ANALYSIS
AMORPHOUS STATE
ION CHANNELING
KEV RANG 10−100

This publication has 2 references indexed in Scilit:

Influence of thermal history on the residual disorder in implanted silicon
Radiation Effects, 1976
Crystal orientation dependence of residual disorder in As−implanted Si
Applied Physics Letters, 1975

Cited by 12 articles