Transmission electron microscopy of the formation of nickel silicides
- 1 January 1982
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine A
- Vol. 45 (1), 31-47
- https://doi.org/10.1080/01418618208243901
Abstract
The formation of Ni2Si, Nisi and NiSi2 on Si has been studied by TEM, particularly with cross-sectional specimens and by high-resolution imaging. Both Ni2Si and Nisi showed an oriented growth on {111) substrates, while NiSi2 grew epitaxially on {111} and {100} Si. Ni2Si assumed two different pseudo-hexagonal orientations whereas Nisi was found to be truly hexagonal instead of orthorhombic on {111} Si. TEM of cross-sectional specimens showed that all the silicide-Si interfaces were quite rough, except in the case of Nisi2 where it was highly facetted. When Ni2Si and Nisi were present simultaneously, they often were separated by an interfacial layer, ∼3 nm thick, which might be related to Kirkendall voids or to remainders of the native oxide on the Si substrate. Cross-sectional views of misfit dislocations in the epitaxial interfaces have been obtained and analysed in terms of their Burgers vector and spacing.Keywords
This publication has 15 references indexed in Scilit:
- Direct TEM determination of intrinsic and extrinsic stacking fault energies of siliconPhilosophical Magazine A, 1979
- Phase diagrams and metal-rich silicide formationJournal of Applied Physics, 1979
- Diffusion of nickel in silicon below 475 °CThin Solid Films, 1978
- On the formation of Ni and Pt silicide first phase: The dominant role of reaction kineticsApplied Physics Letters, 1978
- Marker studies of silicide formation, silicon self-diffusion and silicon epitaxy using radioactive silicon and Rutherford backscatteringNuclear Instruments and Methods, 1978
- A structure modeling of metal-silicide layers by using axial and planar channeling techniquesNuclear Instruments and Methods, 1978
- Radioactive silicon as a marker in thin-film silicide formationApplied Physics Letters, 1977
- Influence of the nature of the Si substrate on nickel silicide formed from thin Ni filmsThin Solid Films, 1976
- Silicide formation in Ni-Si Schottky barrier diodesJournal of Physics D: Applied Physics, 1976
- Structure and growth kinetics of Ni2Si on siliconThin Solid Films, 1975