On the formation of Ni and Pt silicide first phase: The dominant role of reaction kinetics

Abstract

⁴He⁺ backscattering spectrometry and x‐ray diffractometry have been used to study the formation of Ni and Pt silicides in Si(xtl)/M film structures with different metal film thicknesses ranging from 800 to 5000 Å. Results clearly show that first the phase richer in metal (Ni₂Si, Pt₂Si) grows and continues to grow until all available metal is reacted, then the phase richer in Si (PtSi, NiSi) starts to grow. Present results prove that in Si(xtl)/Pt or Ni interactions the growth phase is determined by the reaction kinetics and that diffusion of metal atoms through Pt₂Si and Ni₂Si is fundamental in keeping the reaction going.