On the reliability of 1.3-µm InGaAsP/InP edge-emitting LED́s for optical-fiber communication
- 1 December 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Journal of Lightwave Technology
- Vol. 2 (6), 1016-1023
- https://doi.org/10.1109/jlt.1984.1073711
Abstract
This study of the reliability of 1.3-μm double heterojunction edge-emitting LED's indicates that edge-emitting LED's mounted with Au0.8Sn0.2solder have an activation energy of 0.9 eV for degradation and extrapolated lifetimes of2 \times 10^{8}h at room temperature. A study of 1.3-μm LED's grown by LPE and VPE show them to be comparable in operating life. The temperature dependence of the light output (P) of the edge-emitting LED's is given byP \alpha \exp(-\Delta T/75K). The study also showed that lattice mismatch up to 0.31 percent at the InGaAsP/InP heterojunction does not effect reliability.Keywords
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