Metallurgical amd electroluminescence characteristics of vapor-phase and liquid-phase epitaxial junction structures of InxGa1−xAs
- 1 February 1975
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 4 (1), 37-66
- https://doi.org/10.1007/bf02657835
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Efficient LPE-grown Inx Ga1 −x As LEDs at 1–1.1-μm wavelengthsApplied Physics Letters, 1974
- Monolithic integrated InxGa1−xAs Schottky-barrier waveguide photodetectorApplied Physics Letters, 1974
- Optical properties of vapor-grown Inx Ga1−xAs epitaxial films on GaAs and Inx Ga1−xP substratesJournal of Applied Physics, 1974
- On the ultimate lower limit of attenuation in glass optical waveguidesApplied Physics Letters, 1973
- Zn-diffused laser junctions in InxGa1−xAs and InAsxP1−x grown from In solution at constant temperatureJournal of Applied Physics, 1972
- Preparation and Properties of In[sub x],Ga[sub 1−x]As Single Crystals by Solution Growth TechniqueJournal of the Electrochemical Society, 1971
- Conduction bands of GaxIn1−xAs and InAsxSb1−xalloysCanadian Journal of Physics, 1970
- Liquid-Phase Epitaxy of In× GA1−×AsJournal of the Electrochemical Society, 1970
- Semiconductor diode masers of (InxGa1-x)AsProceedings of the IEEE, 1963
- Thermal, electrical and optical properties of (In,Ga)as alloysJournal of Physics and Chemistry of Solids, 1959