Molecular beam epitaxial GaAs heteroface solar cell grown on Ge
- 15 December 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (12), 1104-1106
- https://doi.org/10.1063/1.91889
Abstract
GaAs/AlGaAs heteroface solar cells having AM1 efficiencies up to 17% have been grown by molecular beam epitaxy (MBE) directly on Ge (100) substrates. These cells on Ge have efficiencies identical to cells grown simultaneously on GaAs. The cells reported here are the highest efficiency MBE solar cells reported to date, and are the first high‐efficiency GaAs solar cells grown directly on Ge by MBE.Keywords
This publication has 6 references indexed in Scilit:
- On the (110) orientation as the preferred orientation for the molecular beam epitaxial growth of GaAs on Ge, GaP on Si, and similar zincblende-on-diamond systemsApplied Physics Letters, 1980
- Calculated and measured efficiencies of thin-film shallow-homojunction GaAs solar cells on Ge substratesApplied Physics Letters, 1979
- Efficient shallow-homojunction GaAs solar cells by molecular beam epitaxyApplied Physics Letters, 1979
- High-efficiency AlGaAs/GaAs concentrator solar cellsApplied Physics Letters, 1979
- Epitaxial deposition of GaAs and GaAsP on Ge substratesJournal of Applied Physics, 1978
- Gallium arsenide films on recrystallized germanium filmsJournal of Applied Physics, 1977