Hot carrier relaxation in InP and GaAs on a subpicosecond time scale
- 1 December 1989
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 32 (12), 1591-1595
- https://doi.org/10.1016/0038-1101(89)90279-7
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Hot-Electron Recombination at Neutral Acceptors in GaAs: A cw Probe of Femtosecond Intervalley ScatteringPhysical Review Letters, 1989
- Band-structure effects on the femtosecond energy relaxation of photoexcited electrons inAlxGa1−xAs/GaAs quantum wellsPhysical Review B, 1988
- Determination of intervalley scattering rates in GaAs by subpicosecond luminescence spectroscopyPhysical Review Letters, 1987
- Femtosecond hot-carrier energy relaxation in GaAsApplied Physics Letters, 1987
- Picosecond band filling in highly excited In-Ga-As-P filmsPhysical Review B, 1986
- Picosecond spectroscopy of hot anti-Stokes luminescence in GaAsPhysical Review B, 1986
- Ultrafast relaxation dynamics of photoexcited carriers in GaAs and related compoundsJournal of the Optical Society of America B, 1985
- Picosecond relaxation of hot carriers in highly photoexcited bulk GaAs and GaAs-AlGaAs multiple quantum wellsApplied Physics Letters, 1984
- Picosecond correlation effects in the hot luminescence of GaAsJournal of Luminescence, 1981
- Dynamics of Photoexcited GaAs Band-Edge Absorption with Subpicosecond ResolutionPhysical Review Letters, 1979