Diffusion of Impurities in Semiconducting Substitutional Solid Solutions InAs1−ηPη and GaAs1−nPη
- 1 January 1969
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 35 (2), 1053-1064
- https://doi.org/10.1002/pssb.19690350258
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- The Effect of Applied Electric Field on Diffusion of Impurities in Gallium ArsenidePhysica Status Solidi (b), 1967
- The Preparation and Properties of Vapor-Deposited Epitaxial GaAs[sub 1−x]P[sub x] Using Arsine and PhosphineJournal of the Electrochemical Society, 1966