EFFICIENT ELECTROLUMINESCENCE FROM GaAs DIODES AT 300°K
- 15 September 1966
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 9 (6), 221-223
- https://doi.org/10.1063/1.1754721
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Characteristics of a GaAs spontaneous infrared source with 40 percent efficiencyIEEE Transactions on Electron Devices, 1965
- Optical Generation Spectrum for the Electron Thermal-Injection Mechanism in GaAs DiodesJournal of Applied Physics, 1964
- QUANTUM EFFICIENCY OF GaAs INJECTION LASERSApplied Physics Letters, 1963
- Statistical Mechanics of Dilute Solid SolutionsJournal of Applied Physics, 1962
- Influence of Arsenic Pressure on the Doping of Gallium Arsenide with GermaniumJournal of Applied Physics, 1960