Optical Generation Spectrum for the Electron Thermal-Injection Mechanism in GaAs Diodes
- 1 September 1964
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 35 (9), 2777-2779
- https://doi.org/10.1063/1.1713840
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Common Occurrence of Artifacts or ``Ghost'' Peaks in Semiconductor Injection Electroluminescence SpectraJournal of Applied Physics, 1964
- Infrared Transmission and Fluorescence of Doped Gallium ArsenidePhysical Review B, 1964
- Electroluminescence and Photoluminescence of GaAs at 77°KPhysical Review B, 1963
- EFFECT OF DOPING ON THE EMISSION PEAK AND THE ABSORPTION EDGE OF GaAsApplied Physics Letters, 1963
- Electron-Hole and Electron-Impurity Band Tunneling in GaAs Luminescent JunctionsPhysical Review Letters, 1963
- Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eVPhysical Review B, 1962