Quenching of the excitonic resonance in a waveguide quantum well field-effect modulator
- 1 June 1990
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 5 (6), 502-507
- https://doi.org/10.1088/0268-1242/5/6/006
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Effects of well width on the characteristics of GaAs/AlGaAs multiple quantum well electroabsorption modulatorsApplied Physics Letters, 1988
- Absorption spectroscopy of the continuous transition from low to high electron density in a single modulation-doped InGaAs quantum wellPhysical Review Letters, 1987
- Carrier Concentration Dependent Absorption Spectra of Modulation Doped n-AlGaAs/GaAs Quantum Wells and Performance Analysis of Optical Modulators and Switches Using Carrier Induced Bleaching (CIB) and Refractive Index Change (CIRIC)Japanese Journal of Applied Physics, 1987
- Novel optoelectronic single quantum well devices based on electron bleaching of exciton absorptionApplied Physics Letters, 1987
- Guided-wave GaAs/AlGaAs FET optical modulator based on free-carrier-induced bleachingElectronics Letters, 1987
- Theory of transient excitonic optical nonlinearities in semiconductor quantum-well structuresPhysical Review B, 1985
- Band-gap renormalization in semiconductor quantum wells containing carriersPhysical Review B, 1985