1.3 µm LPE- and VPE-grown InGaAsP edge-emitting LED́s
- 1 October 1981
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 17 (10), 2130-2134
- https://doi.org/10.1109/jqe.1981.1070635
Abstract
Comparably high performance has been obtained from both vapor-phase and liquid-phase epitaxy InGaAsP/InP 1.3 μm edge-emitting LED's. Best results include 135 μW of optical power coupled into a 50 μm core 0.2 NA graded-index fiber, spectral half-widths ∼600 Å, rise/fall times ∼2 ns, ac modulation rates ∼200 MHz, and reliable operation in excess of 17 000 h @70°C and 3000 h @120°C. Asymmetries in the far-field patterns of these devices are also discussed.Keywords
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