Properties of plasma-produced amorphous silicon governed by parameters of the production, transport and deposition of Si and SiHx
- 11 September 1981
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 83 (2), 223-229
- https://doi.org/10.1016/0040-6090(81)90671-4
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Influence of deposition conditions on sputter-deposited amorphous siliconJournal of Applied Physics, 1978
- Hydrogenation of evaporated amorphous silicon films by plasma treatmentApplied Physics Letters, 1978
- Luminescence studies of plasma-deposited hydrogenated siliconPhysical Review B, 1978
- Optical and photoconductive properties of discharge-produced amorphous siliconJournal of Applied Physics, 1977
- Preparation of highly photoconductive amorphous silicon by rf sputteringSolid State Communications, 1977
- Substitutional doping of amorphous siliconSolid State Communications, 1975
- Electronic Transport in Amorphous Silicon FilmsPhysical Review Letters, 1970
- The Preparation and Properties of Amorphous SiliconJournal of the Electrochemical Society, 1969