Photo-Excited DLTS: Measurement of Minority Carrier Traps
- 1 July 1980
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 19 (7), L436
- https://doi.org/10.1143/jjap.19.l436
Abstract
Novel methods which take into account the temperature dependence of the amplitude of capacitance transient are presented to determine minority carrier trap parameters from Photo-Excited DLTS spectra. These methods were applied to the Fe-level in a GaAs p+n junction and the validity was demonstrated by comparing the results with the conventional junction DLTS.Keywords
This publication has 6 references indexed in Scilit:
- Detection of minority-carrier traps using transient spectroscopyElectronics Letters, 1979
- Hole traps in bulk and epitaxial GaAs crystalsElectronics Letters, 1977
- Electron and hole traps in N-GaAs crystalsApplied Physics A, 1976
- A study of deep levels in GaAs by capacitance spectroscopyJournal of Electronic Materials, 1975
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952