Laser Annealing of Damaged Silicon Covered with a Metal Film: Test for Epitaxial Growth from the Melt
- 12 January 1981
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 46 (2), 156-159
- https://doi.org/10.1103/physrevlett.46.156
Abstract
Damage annealing of a silicon wafer covered by a Ti layer has been obtained by irradiation with a ruby-laser 20-ns pulse of 1 J/ energy density. The thickness of the metal film was chosen so as to ensure complete absorption of the light in order to avoid the formation of a photoexcited electron-hole plasma in Si. The results show a good annealing of the Si damage and a titanium diffusion coefficient consistent with an epitaxial growth from the melt.
Keywords
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