Photovoltaic properties of reactively sputtered a-SiHx films
- 1 January 1980
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 35-36, 719-724
- https://doi.org/10.1016/0022-3093(80)90288-4
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Sputtered hydrogenated amorphous siliconJournal of Electronic Materials, 1979
- Hydrogenation and the density of defect states in amorphous siliconJournal of Non-Crystalline Solids, 1979
- Defects in plasma-deposited a-Si: HJournal of Non-Crystalline Solids, 1979
- Doping, Schottky barrier and pn junction formation in amorphous germanium and silicon by rf sputteringSolid State Communications, 1976
- Schottky-barrier characteristics of metal–amorphous-silicon diodesApplied Physics Letters, 1976
- Use of hydrogenation in structural and electronic studies of gap states in amorphous germaniumPhysical Review B, 1976
- Comments on the evidence for sharp and gradual optical absorption edges in amorphous germaniumPhysica Status Solidi (b), 1973