Schottky-barrier characteristics of metal–amorphous-silicon diodes
- 1 November 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 29 (9), 602-605
- https://doi.org/10.1063/1.89158
Abstract
Metal–amorphous‐silicon Schottky barriers, similar to those used in thin‐film amorphous‐silicon solar cells, exhibit nearly ideal diode behavior in the dark. The current‐voltage characteristics have been studied in the range from 270 to 370 °K and are found to be in agreement with the diffusion theory of metal‐semiconductor rectification. Barrier heights, which were measured by two different methods, depend on the metal work function, and barriers as high as ∼1.1 eV are obtained with Pt films.Keywords
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