Liquid-phase epitaxial growth of multiple (AlGa) P-GaP hetero-junction structures
- 1 August 1976
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 35 (1), 89-97
- https://doi.org/10.1016/0022-0248(76)90248-7
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Observations on Si Contamination in GaP LPEJournal of the Electrochemical Society, 1975
- A millivolt source for temperature programming of laboratory furnacesJournal of Physics E: Scientific Instruments, 1974
- (GaAl)P optical-waveguide modulators fabricated by liquid-phase epitaxyJournal of Applied Physics, 1974
- Green emitting Zn-diffused LPE GaP diodesJournal of Electronic Materials, 1974
- Nitrogen Doping Behavior in GaP Using NH[sub 3] as the Dopant SourceJournal of the Electrochemical Society, 1974
- Si Contamination in Open Flow Quartz Systems for the Growth of GaAs and GaPJournal of the Electrochemical Society, 1972
- P-Type Dopants for GaP Green Light Emitting DiodesJournal of the Electrochemical Society, 1972
- Isothermal Solution Mixing Growth of Thin Ga[sub 1−x]Al[sub x]As LayersJournal of the Electrochemical Society, 1971
- Optical Properties of the Group IV Elements Carbon and Silicon in Gallium PhosphideJournal of Applied Physics, 1968
- Preparation, Stability, and Luminescence of Gallium NitrideJournal of the Electrochemical Society, 1962