Green emitting Zn-diffused LPE GaP diodes
- 1 February 1974
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 3 (1), 265-277
- https://doi.org/10.1007/bf02654556
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Vapor-Doped Multislice LPE for Efficient GaP Green LED'sJournal of the Electrochemical Society, 1973
- Reproducible High-Efficiency GaP Green-Emitting Diodes Grown by OvercompensationJournal of the Electrochemical Society, 1973
- Prevention of diffusion-induced defects in the fabrication of diffused electroluminescent GaP devicesJournal of Electronic Materials, 1972
- P-Type Dopants for GaP Green Light Emitting DiodesJournal of the Electrochemical Society, 1972
- Efficient green electroluminescent diodes by "Double-bin" liquid-phase epitaxyProceedings of the IEEE, 1972
- Electroluminescence and Electrical Properties of High-Purity Vapor-Grown GaPJournal of Applied Physics, 1971
- Efficient green electroluminescent junctions in GaPSolid-State Electronics, 1971
- Properties of GaP Single Crystals Grown by Liquid Encapsulated PullingJournal of the Electrochemical Society, 1971
- Electroluminescence of Diffused GaAs1 − xPx Diodes with Low Donor ConcentrationsJournal of Applied Physics, 1969
- Pulling of gallium phosphide crystals by liquid encapsulationJournal of Crystal Growth, 1968