Substrate engineering for high-performance surface-channel III-V metal-oxide-semiconductor field-effect transistors
- 3 December 2007
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 91 (23), 232107
- https://doi.org/10.1063/1.2822892
Abstract
High-performance inversion-type enhancement-mode n -channel In 0.65 Ga 0.35 As metal-oxide-semiconductor field-effect transistors (MOSFETs) with atomic-layer-deposited Al 2 O 3 as gate dielectric are demonstrated. A 0.5 μ m gate-length MOSFET with an Al 2 O 3 gate oxide thickness of 10 nm shows a gate leakage current less than 5 × 10 − 6 A ∕ cm 2 at 4 V gate bias, a threshold voltage of 0.40 V , a maximum drain current of 670 mA ∕ mm , and transconductance of 230 mS ∕ mm at drain voltage of 2 V . More importantly, a model is proposed to ascribe this 80% improvement of device performance from In 0.53 Ga 0.47 As MOSFETs mainly to lowering the energy level difference between the charge neutrality level and conduction band minimum for In 0.65 Ga 0.35 As . The right substrate or channel engineering is the main reason for the high performance of the devices besides the high-quality oxide-semiconductor interface.Keywords
This publication has 16 references indexed in Scilit:
- Submicrometer Inversion-Type Enhancement-Mode InGaAs MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Gate DielectricIEEE Electron Device Letters, 2007
- Minority-carrier characteristics of InGaAs metal-oxide-semiconductor structures using atomic-layer-deposited Al2O3 gate dielectricApplied Physics Letters, 2006
- Capacitance-voltage studies on enhancement-mode InGaAs metal-oxide-semiconductor field-effect transistor using atomic-layer-deposited Al2O3 gate dielectricApplied Physics Letters, 2006
- GaAs MOSFET Using InAlP Native Oxide as Gate DielectricIEEE Electron Device Letters, 2004
- GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer depositionApplied Physics Letters, 2003
- GaAs MOSFET with oxide gate dielectric grown by atomic layer depositionIEEE Electron Device Letters, 2003
- Impact of metal/oxide interface on DC and RF performance of depletion-mode GaAs MOSFET employing MBE grown Ga2O3(Gd2O3) as gate dielectricJournal of Crystal Growth, 2003
- Demonstration of submicron depletion-mode GaAs MOSFETs with negligible drain current drift and hysteresisIEEE Electron Device Letters, 1999
- Ga2O3(Gd2O3)/InGaAs enhancement-mode n-channel MOSFETsIEEE Electron Device Letters, 1998
- Demonstration of enhancement-mode p- and n-channel GaAs MOSFETS with Ga2O3(Gd2O3) As gate oxideSolid-State Electronics, 1997