Minority-carrier characteristics of InGaAs metal-oxide-semiconductor structures using atomic-layer-deposited Al2O3 gate dielectric
- 25 September 2006
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 89 (13), 132103
- https://doi.org/10.1063/1.2357566
Abstract
Atomic layer deposition (ALD) provides a unique opportunity to integrate high-quality gate dielectrics on III-V compound semiconductors. ALD Al 2 O 3 is a high-quality gate dielectric on III-V compound semiconductor with low interface trap density, low gate leakage, and high thermal stability. The authors study the minority-carrier response of Al 2 O 3 ∕ In Ga As metal-oxide-semiconductor (MOS) structures, which sheds light on the device physics for realizing high-performance inversion-type metal-oxide-semiconductor field-effect-transistor. The minority carriers in InGaAs do not respond to a small ac signal down to 100 Hz at 300 K , while they respond to up to 100 kHz at 500 K . Temperature dependent capacitance-voltage ( C - V ) measurement on the InGaAs MOS structure reveals the activation energy ( E a ) of the minority-carrier recombination to be about 0.62 eV .Keywords
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