CONTINUOUS OPERATION OF GaAs JUNCTION LASERS ON DIAMOND HEAT SINKS AT 200°K

Abstract

Gallium arsenide stripe geometry junction lasers have now been operated continuously at a heat sink temperature of 200°K, which is the highest yet attained. The improvement is due to higher thermal conductivity resulting from (1) a heat sink made of type IIa diamond with a thermal conductivity of 45 W cm⁻¹ °K⁻¹ at 200°K, (2) an optimized stripe width near 12.5 μm and (3) an unusually thin diffused p region, 2.5 μm deep. This type of laser is unique in that the radiation pattern is Gaussian when measured parallel to the junction plane.