In1−xGaxP p-n Junction Lasers

Abstract

The laser operation of In_1−xGa_xP (x∼0.27) p‐n junctions is demonstrated at 4.2 and 77°K. The n‐type material for the junctions is grown at a fixed temperature (900–950°C) from an In solution with the InP and GaP source crystal introduced into the solution at slightly higher temperature. The p‐n junctions are formed at 700°C by Zn diffusion from an In + 10% Zn source. In comparison with InP, the threshold currents for In_1−xGa_xP junctions are large, which is attributed to the problems associated with introducing Zn into the In–Ga sublattice.