The growth of GaAs, AIGaAs, InP and InGaAs by chemical beam epitaxy using group III and V alkyls
- 1 July 1986
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 15 (4), 235-245
- https://doi.org/10.1007/bf02659637
Abstract
No abstract availableKeywords
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