Carrier compensation in O+ implanted n-type GaAs
- 31 October 1980
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 23 (10), 1089-1090
- https://doi.org/10.1016/0038-1101(80)90191-4
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Semi-insulating layers of GaAs by oxygen implantationJournal of Applied Physics, 1976
- A new thin film encapsulant for ion-implanted GaAsThin Solid Films, 1975
- Compensation from implantation in GaAsApplied Physics Letters, 1973
- A technique for directly plotting the inverse doping profile of semiconductor wafersIEEE Transactions on Electron Devices, 1969