Single step preparation of quaternary thin films by RF magnetron sputtering from binary chalcogenide targets
- 1 October 2007
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 68 (10), 1908-1913
- https://doi.org/10.1016/j.jpcs.2007.05.022
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Cu2ZnSnS4 thin film solar cellsThin Solid Films, 2005
- SHORT COMMUNICATION: ACCELERATED PUBLICATION: Diode characteristics in state-of-the-art ZnO/CdS/Cu(In1?xGax)Se2 solar cellsProgress In Photovoltaics, 2005
- Preparation and characterization of Cu2ZnGeSe4 thin films by selenization method using the Cu–Zn–Ge evaporated layer precursorsJournal of Crystal Growth, 2005
- Single crystal preparation and crystal structure of the Cu2Zn/Cd,Hg/SnSe4 compoundsJournal of Alloys and Compounds, 2002
- Electrical and optical properties of CuZnSnS thin films prepared by rf magnetron sputtering processSolar Energy Materials and Solar Cells, 2002
- Thermal analysis and synthesis from the melts of Cu-based quaternary compounds Cu–III–IV–VI4 and Cu2–II–IV–VI4 (II=Zn,Cd; III=Ga,In; IV=Ge,Sn; VI=Se)Journal of Crystal Growth, 2000
- Defect physics of thechalcopyrite semiconductorPhysical Review B, 1998
- Preferential sputtering in binary targetsProgress in Surface Science, 1995
- Electrical and Optical Properties of Stannite-Type Quaternary Semiconductor Thin FilmsJapanese Journal of Applied Physics, 1988
- Theory of the band-gap anomaly inchalcopyrite semiconductorsPhysical Review B, 1984