Catalyst-free growth of GaAs nanowires by selective-area metalorganic vapor-phase epitaxy
Top Cited Papers
- 16 May 2005
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 86 (21)
- https://doi.org/10.1063/1.1935038
Abstract
We report on the fabrication of GaAs hexagonal nanowires surrounded by (110) vertical facets on a GaAs (111) B substrate using selective-area (SA) metalorganic vapor-phase epitaxial (MOVPE) growth. The substrate for SA growth was partially covered with thin SiO2, and a circular mask opening with a diameter d0 of 50–200 nm was defined. After SA-MOVPE, GaAs nanowires with a typical diameter d ranging from 50 to 200 nm and a height from 2 to 9 mm were formed vertically on the substrate without any catalysts. The size of the nanowire depends on the growth conditions and the opening size of the masked substrate. A possible growth mechanism is also discusseKeywords
This publication has 16 references indexed in Scilit:
- Growth of GaAs/AlGaAs hexagonal pillars on GaAs (111)B surfaces by selective-area MOVPEPhysica E: Low-dimensional Systems and Nanostructures, 2004
- Sharp exciton emission from single InAs quantum dots in GaAs nanowiresApplied Physics Letters, 2003
- Spatially controlled, nanoparticle-free growth of InP nanowiresApplied Physics Letters, 2003
- InGaAs nano-pillar array formation on partially masked InP(111)B by selective area metal–organic vapour phase epitaxial growth for two-dimensional photonic crystal applicationNanotechnology, 2003
- Single-nanowire electrically driven lasersNature, 2003
- Logic Gates and Computation from Assembled Nanowire Building BlocksScience, 2001
- Highly Polarized Photoluminescence and Photodetection from Single Indium Phosphide NanowiresScience, 2001
- Room-Temperature Ultraviolet Nanowire NanolasersScience, 2001
- New Technique for Fabrication of Two-Dimensional Photonic Bandgap Crystals by Selective EpitaxyJapanese Journal of Applied Physics, 1997
- Growth and optical properties of nanometer-scale GaAs and InAs whiskersJournal of Applied Physics, 1995