Crystal growth of GaAs and AlGaAs by OMVPE using triethylarsenic as arsenic source
- 31 December 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 93 (1-4), 1-6
- https://doi.org/10.1016/0022-0248(88)90497-6
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 6 references indexed in Scilit:
- Organometallic Vapor-Phase Epitaxy of GaAs Using Triethylarsenic as Arsenic SourceJapanese Journal of Applied Physics, 1988
- Alternatives to arsine: The atmospheric pressure organometallic chemical vapor deposition growth of GaAs using triethylarsenicApplied Physics Letters, 1987
- AlGaAs growth using trimethyl and triethyl compound sourcesJournal of Crystal Growth, 1984
- The effects of the growth temperature on AlxGal-xAs (0≤ x ≤0.37) LED materials grown by OM-VPEJournal of Electronic Materials, 1984
- Characterization of organometallic VPE grown GaAs and AlGaAs for solar cell applicationsJournal of Crystal Growth, 1981
- The growth and characterization of metalorganic chemical vapor deposition (MO-CVD) quantum well transport structuresJournal of Crystal Growth, 1981