Organometallic Vapor-Phase Epitaxy of GaAs Using Triethylarsenic as Arsenic Source
- 1 July 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (7R)
- https://doi.org/10.1143/jjap.27.1151
Abstract
GaAs layers are grown by organometallic vapor-phase epitaxy (OMVPE) from trimethylgallium (TMGa) and triethylarsenic (TEAs) source gases under various growth conditions. Mirror-like surfaces are obtained at growth temperatures 560∼780degC and at [TEAs]/[TMGa] ratios 1.3∼7.3. Samples grown at temperatures higher than 670degC exhibit n-type conductivity, while those lower than 600degC exhibit p-type. For n-type samples, the highest Hall mobilities obtained so far are 5270cm2/Vs and 12200cm2/Vs at 300 K and 77 K, respectively, with the electron concentration of 7.5×1015cm-3. Similar to the conventional GaAs layers grown by various techniques, scattering by ionized impurities and space charges caused by some impurities transported with TEAs seems to degrade electrical properties.Keywords
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