Resonant tunneling of holes in AlAs-GaAs-AlAs heterostructures
- 15 August 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (4), 415-417
- https://doi.org/10.1063/1.96130
Abstract
We have observed resonant tunneling of holes through double-barrier AlAs-GaAs-AlAs structures sandwiched between p+-GaAs regions. The resonances appeared as negative resistance regions in the current-voltage characteristics perpendicular to the interface planes. A set of resonant structures was already visible at high temperatures (T≂250 K) while an additional set was observable only at low temperatures (T≤100 K). Although in principle the sets can be attributed to tunneling of light and heavy holes, respectively, an analysis of the number and relative voltage position of the resonances suggests that considerable band mixing occurs. The application of a strong magnetic field, parallel to the tunneling current, introduced shifts in the resonances which support that interpretation.Keywords
This publication has 12 references indexed in Scilit:
- Resonant tunneling oscillations in a GaAs-AlxGa1−xAs heterostructure at room temperatureApplied Physics Letters, 1985
- Resonant tunneling in GaAs/AlAs heterostructures grown by metalorganic chemical vapor depositionApplied Physics Letters, 1985
- Dependence of tunneling current on structural variations of superlattice devicesApplied Physics Letters, 1985
- Effective masses of holes at GaAs-AlGaAs heterojunctionsPhysical Review B, 1985
- Quantum well oscillatorsApplied Physics Letters, 1984
- Calculation of hole subbands at the GaAs-interfacePhysical Review B, 1984
- Physics of resonant tunneling. The one-dimensional double-barrier casePhysical Review B, 1984
- Resonant tunneling through quantum wells at frequencies up to 2.5 THzApplied Physics Letters, 1983
- Resonant tunneling in semiconductor double barriersApplied Physics Letters, 1974
- Tunneling in a finite superlatticeApplied Physics Letters, 1973