Dependence of tunneling current on structural variations of superlattice devices

Abstract

The tunneling current of a three‐terminal, double‐barrier superlattice device has been calculated by solving the Schrödinger equation. The results indicate that the negative resistance resulting from resonant tunneling can be adjusted by varying the bias voltages. Use of multiple barriers has been explored. In particular, we have examined the effect on the tunneling current of asymmetric wells and barrier heights. Deviations from perfect symmetry are seen to produce radical changes in the results. The detailed features of the I‐V curve could be used to probe the superlattice structure.