Chemical and plasmachemical vapour deposition of aluminium nitride layers
- 1 January 1976
- journal article
- Published by Wiley in Crystal Research and Technology
- Vol. 11 (1), 17-21
- https://doi.org/10.1002/crat.19760110104
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- The growth, crystallographic and electrical assessment of epitaxial layers of aluminium nitride on corundum substratesJournal of Crystal Growth, 1974
- Acoustic surface wave properties of epitaxially grown aluminum nitride and gallium nitride on sapphireApplied Physics Letters, 1973
- Epitaxial growth and piezoelectric properties of A1N, GaN, and GaAs on sapphire or spinelJournal of Electronic Materials, 1973
- Mass spectrometric and thermodynamics studies of the CVD of some III–V compoundsJournal of Crystal Growth, 1972
- The Use of Metalorganics in the Preparation of Semiconductor MaterialsJournal of the Electrochemical Society, 1971
- The Role of Homogeneous Reactions in Chemical Vapor DepositionJournal of the Electrochemical Society, 1971
- Evaluation of new single crystal piezoelectric materials for surface acoustic-wave applicationsUltrasonics, 1970
- Properties of Aluminum Nitride Derived from AlCl[sub 3][middle dot]NH[sub 3]Journal of the Electrochemical Society, 1970
- Darstellung von Aluminiumnitrid durch Umsetzung von Aluminium in einem nicht- isothermen Stickstoff/Chlor-NiederdruckplasmaZeitschrift für Naturforschung A, 1969
- Growth Characteristics of AlN Films Pyrolytically Deposited on SiJournal of Applied Physics, 1968