Preparation and Characterization of PZT Thin Films on CeO 2(111)/Si(111) Structures

Abstract

We report the crystalline quality and electrical properties of PbZr_1-x Ti_xO₃ (PZT) films on Si substrates with epitaxially grown CeO₂ buffer layers. CeO₂ buffer layers were deposited by the electron-beam-assisted evaporation technique, and PZT films were formed by the sol-gel technique. It is shown that CeO₂ buffer layers, which were epitaxially grown on Si(111) substrates at 500°C, effectively suppressed Si and Pb interdiffusion between PZT films and Si substrates. Furthermore, the capacitance-voltage and current-voltage properties of PZT/CeO₂/Si indicated a ferroelectric nature and excellent breakdown strength.