Preparation of PbTiO3 Thin Film on Si by ArF Excimer Laser Ablation
- 1 September 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (9S)
- https://doi.org/10.1143/jjap.32.4107
Abstract
Deposition behavior of PbTiO3 thin films on Si substrates having native oxide has been investigated by the laser ablation method using an ArF excimer laser. Atomic ratio Pb/Ti in the film decreases with increase of substrate temperature and laser shot period, but only changes slightly with increase of laser fluence. Preferentially c-axis-oriented film on Si substrate is obtained during the deposition in O2 gas of 13 Pa at the substrate temperature of 500°C and low laser repetition rate. The change of Pb/Ti and the origin of the preferential orientation are explained by Pb reevaporation from the substrate and successive deposition of Pb and Ti layers. Dielectric constant and the remanent polarization are about 130 and 30 µC/cm2, respectively.Keywords
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