Microwave Mixing by Hot Electrons in Homogeneous Semiconductors
- 1 April 1968
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 39 (5), 2263-2264
- https://doi.org/10.1063/1.1656540
Abstract
A new type of microwave emission from homogeneous semiconductors with nonlinear characteristics is observed when two waves of frequencies ω and ω+Δω are incidental: The emitted waves have frequencies ω−N·Δω and ω+(N+1)·Δω, N=1, 2, 3, ⋯. For medium field amplitudes, the frequency dependence of the emission is calculated taking energy relaxation of the carriers into account.Keywords
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