Epitaxial growth of monoclinic and cubic ZrO2 on Si(100) without prior removal of the native SiO2
- 1 September 1992
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 217 (1-2), 125-128
- https://doi.org/10.1016/0040-6090(92)90617-k
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Epitaxial yttria-stabilized zirconia on hydrogen-terminated Si by pulsed laser depositionApplied Physics Letters, 1990
- High critical currents in strained epitaxial YBa2Cu3O7−δ on SiApplied Physics Letters, 1990
- Strain measurements in heteroepitaxial yttria-stabilized zirconia on Si by ion beam channelingJournal of Applied Physics, 1990
- As-Grown Preparation of Superconducting Epitaxial Ba2YCu3Ox Thin Films Sputtered on Epitaxially Grown ZrO2/Si(100)Japanese Journal of Applied Physics, 1989
- Influence of a thin interfacial oxide layer on the ion beam assisted epitaxial crystallization of deposited SiApplied Physics Letters, 1988
- Epitaxial growth of yttria-stabilized zirconia films on silicon by ultrahigh vacuum ion beam sputter depositionApplied Physics Letters, 1988
- Heteroepitaxial Growth of Yttria-Stabilized Zirconia (YSZ) on SiliconJapanese Journal of Applied Physics, 1988
- Growth of crystalline zirconium dioxide films on siliconJournal of Applied Physics, 1985
- Solid-state epitaxial growth of deposited Si filmsApplied Physics Letters, 1979
- Low Voltage Electron Diffraction Study of the Oxidation and Reduction of SiliconJournal of Applied Physics, 1962