Epitaxial yttria-stabilized zirconia on hydrogen-terminated Si by pulsed laser deposition

Abstract

Epitaxial yttria‐stabilized zirconia films were grown on Si (100) and Si (111) by pulsed laser deposition. Rutherford backscattering spectroscopy indicates a high degree of crystalline perfection with a channeling minimum yield of 5.3%. A necessary predeposition process is removal of native silicon oxide from the Si prior to film growth. This is done outside the deposition chamber at 23 °C using a wet‐chemical hydrogen‐termination procedure. Epitaxial YBa₂Cu₃O_7−δ films have been grown on these films.