Low-energy ion-scattering spectrometry (ISS) of the SiO2/Si interface
- 15 December 1975
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 27 (12), 644-645
- https://doi.org/10.1063/1.88345
Abstract
The interface between Si and thermally grown SiO2 has been examined in detail by low‐energy 4He+ion scattering. The oxide composition is shown to be stoichiometric to within 15–20 Å of the interface. ISS depth profiles clearly establish a region of excess Si that extends from the interface into the oxide for 15–20 Å, corresponding to four or five molecular layers. The amount of excess Si is calculated from the experimental data as 1.4×1014 atoms/cm2 per monomolecular layer (about 20% excess).Keywords
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