X-Ray Observations of Partial Dislocations in Epitaxial Silicon Films

Abstract

Crystal perfection of epitaxial silicon films has been studied by x‐ray diffraction microscopy. X‐ray observations indicate the presence of defects in {111} planes with 〈112〉 Burgers vectors. The x‐ray image associated with these defects is interpreted as due to stacking faults bounded by partial dislocations. Large stacking faults, the faulted area between the partials as wide as 10 μ, have been found to be the principal imperfections in epitaxially grown silicon films.