Model for hysteresis and kink behavior of MOS transistors operating at 4.2 K
- 1 July 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 35 (7), 1120-1125
- https://doi.org/10.1109/16.3372
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
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