The role of interface states and series resistance on the I–V and C–V characteristics in Al/SnO2/p-Si Schottky diodes
- 31 October 2003
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 47 (10), 1847-1854
- https://doi.org/10.1016/s0038-1101(03)00182-5
Abstract
No abstract availableKeywords
This publication has 36 references indexed in Scilit:
- Electrical characteristics of CoSi2/n-Si(100) Schottky barrier contacts formed by solid state reactionSolid-State Electronics, 2000
- Effect of localized states on the current-voltage characteristics of metal-semiconductor contacts with thin interfacial layerSolid-State Electronics, 1994
- Temperature dependent electrical characteristics of AlSiOxpSi solar cellsSolar Energy Materials and Solar Cells, 1994
- Parameter extraction from non-ideal C−V characteristics of a Schottky diode with and without interfacial layerSolid-State Electronics, 1992
- Temperature dependence of I-V and C-V characteristics of Ni/n-CdF2 Schottky barrier type diodesSolid-State Electronics, 1990
- On the current transport mechanism in a metal—insulator—semiconductor (MIS) diodeSolid-State Electronics, 1986
- Electrical characteristics of silicon-tin oxide heterojunctions prepared by chemical vapor depositionJournal of Applied Physics, 1984
- Current-voltage characteristic of Ti-pSi metal-oxide-semiconductor diodesJournal of Applied Physics, 1984
- A reevaluation of the meaning of capacitance plots for Schottky-barrier-type diodesJournal of Applied Physics, 1983
- The physical significance of the T0 anomalies in Schottky barriersSolid-State Electronics, 1977